English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
| 电容@vr, f: | 80pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AD, Axial |
| 供应商设备包: | DO-201AD |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ES3DV M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
|
S1GL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |
|
BYG20D-E3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A |
|
JANTXV1N5619Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1A AXIAL |
|
VS-40HFL10S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
|
UPR10E3/TR7Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 2.5A DO216 |
|
SF16G-TPMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
|
GF1M/1754Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO214BA |
|
BYT77-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
|
BAS3010A03WE6327HTSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 30V 1A SOD323-2 |
|
SCS206AJTLLROHM Semiconductor |
DIODE SCHOTTKY 650V 6A TO263AB |
|
CDBQR54Comchip Technology |
DIODE SCHOTTKY 30V 200MA 0402 |
|
SK56BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 5A DO214AA |
