类型 | 描述 |
---|---|
系列: | CoolSiC™+ |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 3A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.8 V @ 3 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 500 µA @ 650 V |
电容@vr, f: | 100pF @ 1V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
供应商设备包: | PG-TO263-2 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
V3F6-M3/IVishay General Semiconductor – Diodes Division |
3A,60V,SMF,TRENCH SKY RECT. |
|
S1ALHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A SUB SMA |
|
VS-1N2137AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 60A DO203AB |
|
UPR10/TR7Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 2.5A DO216 |
|
PMEG2005EGW118Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
BYW56-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 2A SOD57 |
|
NRVB0530T1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 500MA SOD123 |
|
VS-6ESH02HM3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
|
S1J-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GPP 1A 600V DO-214AC |
|
MA3Z7920GLPanasonic |
DIODE SCHOTTKY 30V 100MA SMINI3 |
|
SL23-E3/52TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AA |
|
NTE5811NTE Electronics, Inc. |
R-1200V 12A DO4 AK |
|
RB058LAM150TFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |