类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 990 V |
电流 - 平均整流 (io): | 1.4A |
电压 - 正向 (vf) (max) @ if: | 1.4 V @ 1.4 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 50 ns |
电流 - 反向泄漏@ vr: | 2 µA @ 990 V |
电容@vr, f: | 40pF @ 10V, 1MHz |
安装类型: | Through Hole |
包/箱: | A, Axial |
供应商设备包: | - |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5391G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1.5A DO204AC |
|
ST15200SMC Diode Solutions |
DIODE SCHOTTKY 200V TO220AC |
|
1N4005GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
BAT54A/6235Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
S1JB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A SMB |
|
VS-E5TH3012-N3Vishay General Semiconductor – Diodes Division |
DIODE FREDS 1200V 30A TO-220 |
|
VS-25ETS08S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 25A TO263AB |
|
RBR1MM40ATFTRROHM Semiconductor |
DIODE (RECTIFIER FRD) 40V-VR 1A- |
|
1N4004GPE-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
PMEG120G30ELPJNexperia |
PMEG120G30ELP/SOD128/FLATPOWER |
|
RS1J-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
|
SK36-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 60V 3A DO214AB |
|
1N2130AGeneSiC Semiconductor |
DIODE GEN PURP 150V 60A DO5 |