English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 1200 V |
| 电流 - 平均整流 (io): | 8A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.75 V @ 8 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 200 µA @ 1200 V |
| 电容@vr, f: | 538pF @ 1V, 100kHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 |
| 供应商设备包: | TO-220-2L |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SR315HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 3A DO201AD |
|
SK52C R7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 5A DO214AB |
|
SBRT4U10LP-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 10V 4A U-DFN2020-2 |
|
V3F6-M3/HVishay General Semiconductor – Diodes Division |
3A,60V,SMF,TRENCH SKY RECT. |
|
VS-60APU04HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
|
ES2FA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 2A DO214AC |
|
NSVBAS116LT3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 75V 200MA SOT23-3 |
|
SBR3U40P1Q-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 40V 3A POWERDI123 |
|
1N4937-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
B340LA-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A SMA |
|
1N914TRSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
ACGRAT105L-HFComchip Technology |
DIODE GEN PURP 1KV 1A 2010 |
|
LS103B-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 15A SOD80 |
