类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 300 V |
电流 - 平均整流 (io): | 4A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.6 V @ 1 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 300 V |
电容@vr, f: | 76pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-206AB, TO-46-3 Metal Can |
供应商设备包: | TO-46 |
工作温度 - 结: | -55°C ~ 225°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GF1MHE3/5CAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO214BA |
|
B170Q-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 70V 1A SMA |
|
BYW172D-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
|
BAS16LD,315Nexperia |
DIODE GP 100V 215MA SOD882D |
|
1N5620Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A AXIAL |
|
NSVBAS19LT1GSanyo Semiconductor/ON Semiconductor |
DIODE GP 120V 200MA SOT23-3 |
|
RGL1DDiotec Semiconductor |
DIODE FR DO-213AA 200V 1A |
|
D931SH65TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 6.5KV 1220A |
|
MBRD340T4Rochester Electronics |
DEVELOPMENT KITS/ACCESSORIES |
|
SS320B-HFComchip Technology |
DIODE SCHOTTKY 3A 200V SMB |
|
MR760Solid State Inc. |
RECT 1000 V 6 AMPS |
|
1N6483-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
|
SE40PB-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2.4A TO277A |