CAP CER 0.3PF 100V C0G/NP0 1111
DIODE GEN PURP 600V 1A AXIAL
类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/427 |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 3 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 2 µs |
电流 - 反向泄漏@ vr: | 500 nA @ 600 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | A, Axial |
供应商设备包: | - |
工作温度 - 结: | -65°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
V1PM10HM3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1A MICROSMP |
|
FES16AT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 16A TO220AC |
|
S2KHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 2A DO214AA |
|
VS-20ETF02-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 20A TO220AC |
|
ES3F-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 3A DO214AB |
|
BAV102,135Nexperia |
DIODE GEN PURP 150V 250MA LLDS |
|
S1JHESanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 1A SOD323HE |
|
PDS540-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 5A POWERDI5 |
|
SS210LHRUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 2A SUB SMA |
|
SSL33 R7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO214AB |
|
RS1G M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO214AC |
|
SK39A R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 3A DO214AC |
|
NTE5884NTE Electronics, Inc. |
R-600V 25A DO4 KK |