English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SBR® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Super Barrier |
| 电压 - 直流反向 (vr) (max): | 20 V |
| 电流 - 平均整流 (io): | 700mA |
| 电压 - 正向 (vf) (max) @ if: | 550 mV @ 700 mA |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 50 µA @ 20 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | 0402 (1006 Metric) |
| 供应商设备包: | X2-DFN1006-2 |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
V2FM15-M3/IVishay General Semiconductor – Diodes Division |
2A,150V,SMF,TRENCH SKY RECT. |
|
RS1BHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO214AC |
|
SF32GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO201AD |
|
IDB15E60ATMA1Rochester Electronics |
IDB15E60 - INDUSTRY 14 |
|
1N6098GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 50A DO5 |
|
TST20L150CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 10A TO220AB |
|
JANTX1N4500Roving Networks / Microchip Technology |
DIODE GEN PURP 80V DO35 |
|
VS-EBU15006HF4Vishay General Semiconductor – Diodes Division |
DIODE GP 600V 150A POWERTAB |
|
BAV19W RHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 250V 200MA SOD123 |
|
PMEG2002AESFBYLNexperia |
DIODE SCHTKY 20V 200MA DSN0603B2 |
|
BAS316ZNexperia |
DIODE GEN PURP 100V 250MA SC76-2 |
|
1N5818 TR TIN/LEADCentral Semiconductor |
DIODE SCHOTTKY 30V 1A DO41 |
|
CD214A-S1KJ.W. Miller / Bourns |
DIO RECT |
