DIODE GEN PURP 200V 1A SMA
PHOTODETECTOR
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 200 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 150 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
电容@vr, f: | 15pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | SMA |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BAV20W-G3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 250MA SOD123 |
|
BYP25K4Diotec Semiconductor |
DIODE STD D13X10.7W 400V 25A |
|
VS-1N3209Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 15A DO203AB |
|
SCS205KGHRCROHM Semiconductor |
DIODE SCHOTTKY 1200V 5A TO-220-2 |
|
BYWF29-150-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A ITO220AC |
|
SK1030D2Diotec Semiconductor |
SCHOTTKY D2PAK 30V 10A |
|
VBT5200-E3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 5A 200V TO-263AB |
|
HER208G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 2A DO204AC |
|
SS115LWHRVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SOD123W |
|
FFSH5065ASanyo Semiconductor/ON Semiconductor |
650V 50A SIC SBD |
|
ES1LJ R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AC |
|
FESF16GTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 16A ITO220AC |
|
RGL41G/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |