类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/118 |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 180 V |
电流 - 平均整流 (io): | 200mA (DC) |
电压 - 正向 (vf) (max) @ if: | 1 V @ 100 mA |
速度: | Small Signal =< 200mA (Io), Any Speed |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 25 nA @ 180 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RGL1GDiotec Semiconductor |
DIODE FR DO-213AA 400V 1A |
|
VS-1N1205AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 12A DO203AA |
|
ACGRBT202-HFComchip Technology |
DIODE GEN PURP 400V 2A 2114 |
|
1N4001G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 1A DO41 |
|
B2100-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 2A SMB |
|
BAS16L-G3-08Vishay General Semiconductor – Diodes Division |
SWITCHING DIODE GENPURP DFN1006- |
|
NTE5830NTE Electronics, Inc. |
R-50 PRV 3A CATH CASE |
|
VS-SD1553C25S20KVishay General Semiconductor – Diodes Division |
DIODE GP 2.5KV 1825A DO200AC |
|
D2450N02TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 200V 2450A |
|
BAT43W-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 200MA SOD123 |
|
RS2GHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1.5A DO214AA |
|
UG2B-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO204AC |
|
NHPV08S600GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220-2 |