English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 80 V |
| 电流 - 平均整流 (io): | 30A |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 30 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 1 mA @ 80 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-3 |
| 供应商设备包: | TO-220AB |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VB10150S-E3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 10A TO263AB |
|
SF61G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 6A DO201AD |
|
S3JB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO214AA |
|
VS-10ETF02FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 10A TO220FP |
|
VS-SD603C08S10CVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 600A B-43 |
|
NTE6043NTE Electronics, Inc. |
R-800 PRV 60A ANODE CASE |
|
S3MHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO214AB |
|
1N6628Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1.75A AXIAL |
|
CMSH1-100 BK PBFREECentral Semiconductor |
DIODE SCHOTTKY 100V 1A SMB |
|
1N5395Rochester Electronics |
RECTIFIER DIODE |
|
SK345AFL-TP-HFMicro Commercial Components (MCC) |
3A,45V,SCHOTTKY,DO-221AC PACKAGE |
|
CD214B-FS3GJ.W. Miller / Bourns |
DIO RECT VRRM 400V 3A SMB |
|
VS-8EWF12SLHM3Vishay General Semiconductor – Diodes Division |
DIODES - D-PAK-E3 |
