类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 40 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 550 mV @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 100 µA @ 40 V |
电容@vr, f: | 90pF @ 10V, 1MHz |
安装类型: | Surface Mount |
包/箱: | POWERDI®123 |
供应商设备包: | PowerDI™ 123 |
工作温度 - 结: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SL34ASURGE |
3A -40V - SMA (DO-214AC) - RECTI |
|
1N4937E-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
RB160M-60TRROHM Semiconductor |
DIODE SCHOTTKY 60V 1A PMDU |
|
MBRH24030RGeneSiC Semiconductor |
DIODE SCHOTTKY 30V 240A D67 |
|
UES1104Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
MA2C029TAFPanasonic |
DIODE GEN PURP 6V 70MA DO34 |
|
FESB8JT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
1N5312Solid State Inc. |
FED 3.9 MA DO35 |
|
VS-12FR60MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
|
ISL9R1560G2Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 15A TO247-2 |
|
TST30L60CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 15A TO220AB |
|
S1DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
JANTX1N5811Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 3A AXIAL |