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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | - |
| 电压 - 直流反向 (vr) (max): | - |
| 电流 - 平均整流 (io): | - |
| 电压 - 正向 (vf) (max) @ if: | - |
| 速度: | - |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | - |
| 电容@vr, f: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
| 工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GR1MSURGE |
1A -1000V - SMA (DO-214AC) - REC |
|
DSEP15-12CRWickmann / Littelfuse |
DIODE GP 1.2KV 15A ISOPLUS247 |
|
VS-C4PH3006L-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO247AD |
|
MURS360-M3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
|
AS1PBHM3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 100V 1.5A DO220 |
|
HVM8Rectron USA |
DIODE GEN PURP 8000V 350MA HVM |
|
JAN1N4245Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
MUR2510RGeneSiC Semiconductor |
DIODE GEN PURP REV 100V 25A DO4 |
|
MBR830MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 8A 5DFN |
|
LS101C-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
|
SF32G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO201AD |
|
DZ950N44KHPSA1IR (Infineon Technologies) |
DIODE GEN PURP 4.4KV 950A MODULE |
|
US1J M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AC |
