







PWR XFMR LAMINATED 43VA CHAS MT
SWITCH SNAP ACT DPDT 100MA 125V
DIODES SILICON CARBIDE
IC EEPROM 2KBIT I2C 400KHZ 8TDFN
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 650 V |
| 电流 - 平均整流 (io): | 4A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 4 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 20 µA @ 650 V |
| 电容@vr, f: | 200pF @ 1V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 Full Pack |
| 供应商设备包: | TO-220FM |
| 工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AU3PG-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
|
|
RS1D M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
|
SK36A-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 60V 3A DO214AC |
|
|
MUR210GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
|
|
JANTX1N3595-1Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 150MA DO35 |
|
|
IDH05SG60CXKSA1Rochester Electronics |
RECTIFIER DIODE |
|
|
VIT2060G-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 10A TO262AA |
|
|
HS1B M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO214AC |
|
|
BAT64-04B5003Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
|
RFN5BM3STLROHM Semiconductor |
DIODE GEN PURP 350V 5A TO252 |
|
|
MUR420HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 4A DO201AD |
|
|
VS-T85HFL40S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 85A D-55 |
|
|
RB521ZS-30T2RROHM Semiconductor |
DIODE SCHOTTKY 30V 100MA GMD2 |