类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 45 V |
电流 - 平均整流 (io): | 14A (DC) |
电压 - 正向 (vf) (max) @ if: | 480 mV @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 40 ns |
电流 - 反向泄漏@ vr: | 80 µA @ 45 V |
电容@vr, f: | 1.4nF @ 1V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-277, 3-PowerDFN |
供应商设备包: | CFP15 |
工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-HFA06TB120SPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 6A D2PAK |
|
1N5819RLGRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 1A, 4 |
|
ISL9R1560S3STSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 15A TO263-2 |
|
VS-HFA04TB60S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A D2PAK |
|
CD214A-R12000J.W. Miller / Bourns |
DIODE GEN PURP 2KV 1A SMA |
|
SE40PJ-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2.4A TO277A |
|
AR4PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
|
1N6642USRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA D5D |
|
RB521VM-40FHTE-17ROHM Semiconductor |
RB521VM-40FH IS SUPER LOW V |
|
FMY-1106SSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 10A TO220F |
|
ACDBA260LR-HFComchip Technology |
DIODE SCHOTTKY 60V 2A DO214AC |
|
SS1FH6HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
|
UGB8JTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |