English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 20 V |
| 电流 - 平均整流 (io): | 2A |
| 电压 - 正向 (vf) (max) @ if: | 400 mV @ 2 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 500 µA @ 20 V |
| 电容@vr, f: | 30pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
| 工作温度 - 结: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SR303HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO201AD |
|
MUR190AHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 900V 1A DO204AL |
|
FR153G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1.5A DO204AC |
|
MUR160GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 1A AXIAL |
|
VS-8EWS12S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 8A TO252AA |
|
NRVBM110LT1GRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 1A, 1 |
|
VS-305U250P4Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.5KV 300A DO9 |
|
GP10ME-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
SCS220KGCROHM Semiconductor |
DIODE SCHOTTKY 1.2KV 20A TO220AC |
|
NTE580-1NTE Electronics, Inc. |
R-SI 600V 3A FAST RECOVER |
|
MBRA140T3Rochester Electronics |
RECTIFIER DIODE |
|
PR1002G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1A DO41 |
|
SURS8105T3GRochester Electronics |
RECTIFIER DIODE, 2A, 50V |
