English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 150 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 50 V |
| 电容@vr, f: | 15pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | R-1, Axial |
| 供应商设备包: | R-1 |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTXV1N4148UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO213AA |
|
UF1JLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SOD123W |
|
MBR3100VPTR-G1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 3A DO27 |
|
1N4150W-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 200MA SOD123 |
|
HS5M-F1-0000 |
DIODE GEN PURP 1000V 5A DO214AB |
|
NTE6248NTE Electronics, Inc. |
R-SI 600V 16A TO-220 |
|
AU2PGHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
|
MMBD4448WTRSMC Diode Solutions |
DIODE GEN PURP 75V 250MA SOT323 |
|
BAV200-GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 250MA SOD80 |
|
SMS3100Diotec Semiconductor |
SCHOTTKY MELF 100V 3A |
|
NTE5874NTE Electronics, Inc. |
R-200PRV 12A CATH CASE |
|
BYM10-600-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
|
ESH2PB-M3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO220AA |
