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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 150 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 820 mV @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 1 µA @ 150 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | DO-216AA |
| 供应商设备包: | STmite |
| 工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HSM840JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 8A DO214AB |
|
BAT41STMicroelectronics |
DIODE SCHOTTKY 100V 100MA DO35 |
|
SS12P4S-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 12A TO277A |
|
JANTX1N6640USRoving Networks / Microchip Technology |
DIODE GEN PURP 50V 300MA D5D |
|
SS310HR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
GP10G-4004EHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
SF63GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 6A DO201AD |
|
LS4151-GS18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 300MA SOD80 |
|
FR106G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO204AL |
|
ES1PBHM3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
|
SS1FH10-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1A DO-219AB |
|
S1JFS MWGTSC (Taiwan Semiconductor) |
DIODE, 1A, 600V, SOD-128 |
|
S4PD-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
