类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/609 |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 50 V |
电流 - 平均整流 (io): | 300mA |
电压 - 正向 (vf) (max) @ if: | 1 V @ 200 mA |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 4 ns |
电流 - 反向泄漏@ vr: | 100 nA @ 50 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | SQ-MELF, D |
供应商设备包: | D-5D |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SS310HR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
GP10G-4004EHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
SF63GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 6A DO201AD |
|
LS4151-GS18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 300MA SOD80 |
|
FR106G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO204AL |
|
ES1PBHM3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
|
SS1FH10-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1A DO-219AB |
|
S1JFS MWGTSC (Taiwan Semiconductor) |
DIODE, 1A, 600V, SOD-128 |
|
S4PD-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
|
GIB1404-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
MMBD3004 RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 350V 225MA SOT23 |
|
QH12TZ600Power Integrations |
DIODE GEN PURP 600V 12A TO220AC |
|
VS-1N1202RAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 12A DO203AA |