English
简体中文
DIODE SCHOTTKY 50V DO35
HARNESS WITH SOCKET 7P 24V ISUZU
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 30mA |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 15 mA |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 200 nA @ 40 V |
| 电容@vr, f: | 2.1pF @ 0V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 |
| 工作温度 - 结: | 125°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FE3BDiotec Semiconductor |
DIODE SFR DO-201 100V 3A |
|
1N4001Rochester Electronics |
RECTIFIER DIODE |
|
S2K-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1.5A DO214AA |
|
S2ATRSMC Diode Solutions |
DIODE GEN PURP 50V 2A SMB |
|
AM01ZV1Sanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |
|
BYV10-600PQ127Rochester Electronics |
ULTRAFAST RECTIFIER DIODE TO 22 |
|
S1BL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
|
UFS115JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 1A DO214BA |
|
EGL34B-E3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
|
NTE5896NTE Electronics, Inc. |
R-200PRV 16A CATH CASE |
|
JANTX1N5806USRoving Networks / Microchip Technology |
DIODE GEN PURP 150V 1A D5A |
|
BYT53G-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.9A SOD57 |
|
DSEI25-06AS-TUBWickmann / Littelfuse |
POWER DIODE DISCRETES-FRED TO-26 |