English
简体中文
DIODE GEN PURP 200V 1A DO214AC
SMA-RP/N-SJB G142 36I
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 1 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 1.5 µs |
| 电流 - 反向泄漏@ vr: | 1 µA @ 200 V |
| 电容@vr, f: | 12pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AC, SMA |
| 供应商设备包: | DO-214AC (SMA) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BA892-02V-E6327Rochester Electronics |
RECTIFIER DIODE, 35V |
|
1N5819 TR TIN/LEADCentral Semiconductor |
DIODE SCHOTTKY 40V 1A DO41 |
|
S4PB-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
|
JANTX1N4148UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO213AA |
|
RB400VYM-50FHTRROHM Semiconductor |
SCHOTTKY BARRIER DIODE (AEC-Q101 |
|
GL41A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
|
NSB8BT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
|
NSR05F30NXT5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 500MA 2DSN |
|
NTE5962NTE Electronics, Inc. |
R-400PRV 25A CATH CASE |
|
JANTXV1N5819-1Roving Networks / Microchip Technology |
DIODE SCHOTTKY 45V 1A DO41 |
|
RGL1BDiotec Semiconductor |
DIODE FR DO-213AA 100V 1A |
|
1N1204ARGeneSiC Semiconductor |
DIODE GEN PURP REV 400V 12A DO4 |
|
SS29FARochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 2A, 9 |