类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 200 V |
电流 - 平均整流 (io): | 200mA |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
速度: | Small Signal =< 200mA (Io), Any Speed |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 10 nA @ 180 V |
电容@vr, f: | 4pF @ 0V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
供应商设备包: | SOT-23-3 |
工作温度 - 结: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BYC10B-600,118WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 500V 10A D2PAK |
|
SS3P5HM3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A DO220AA |
|
VS-1N3624Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 700V 12A DO203AA |
|
GC50MPS06-247GeneSiC Semiconductor |
SIC DIODE 650V 50A TO-247-2 |
|
STTH31AC06SPFSTMicroelectronics |
DIODE GEN PURP 600V 30A TO-3PF |
|
D6025LTPWickmann / Littelfuse |
DIODE GEN PURP 600V 15.9A TO220 |
|
HSM825JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 25V 8A DO214AB |
|
1N4725Roving Networks / Microchip Technology |
DIODE GEN PURP 1KV 3A AXIAL |
|
APT100D60B2GRoving Networks / Microchip Technology |
FRED D 600 V 100 A TO-247 MAX |
|
STPSC2H065B-TRSTMicroelectronics |
650 V, 2 A HIGH SURGE SILICON CA |
|
FFH50US60S-F085Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 50A TO247-2 |
|
STTH30R04DSTMicroelectronics |
DIODE GEN PURP 400V 30A TO220AC |
|
SS13L R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A SUB SMA |