类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 80 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 830 mV @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 200 µA @ 80 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
供应商设备包: | TO-252, (D-Pak) |
工作温度 - 结: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ESH1C-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
|
RD1006LS-SB5Rochester Electronics |
SWITCHING JUNCTION SILICON DIODE |
|
SS12P4S-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 12A TO277A |
|
SK33A R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO214AC |
|
STPS340SYSTMicroelectronics |
DIODE SCHOTTKY 40V 3A SMC |
|
IDW40E65D2Rochester Electronics |
IDW40E65 - SILICON POWER DIODE |
|
VS-309UA160Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 330A DO205 |
|
1N5822 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 3A DO201AD |
|
G1J-F1-3000HF |
DIODE GEN PURP 600V 1A SOD123FL |
|
NTE6033NTE Electronics, Inc. |
R-1KV PRV 40A FAST REC AK |
|
MURSD820A-TPMicro Commercial Components (MCC) |
8A/200V FRED RECTIFIERS,DPAK PAC |
|
NSVBAT54HT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD323 |
|
BYT53C-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 150V 1.9A SOD57 |