类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 5A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 5 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 10 µA @ 800 V |
电容@vr, f: | 40pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | DO-214AA (SMB) |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GSD2004WS-E3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 240V 225MA SOD323 |
|
BAT83S-TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 30MA DO35 |
|
VS-SD1500C04LVishay General Semiconductor – Diodes Division |
DIODE GP 400V 1600A DO200AB |
|
GPP10G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
VS-8EWS10STR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
|
1N4937G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A DO41 |
|
STTH3012DSTMicroelectronics |
DIODE GEN PURP 1.2KV 30A TO220AC |
|
PMEG2010EPASXRochester Electronics |
NOW NEXPERIA PMEG2010EPASX - REC |
|
VSS8D3M12HM3/IVishay General Semiconductor – Diodes Division |
3A, 120V, SLIMSMAW TRENCH SKY RE |
|
1N1186RGeneSiC Semiconductor |
DIODE GEN PURP REV 200V 35A DO5 |
|
SL02-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 1.1A DO219AB |
|
SRA10100 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 10A TO220AC |
|
VS-10ETF10S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 10A D2PAK |