类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 3 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 1.5 µs |
电流 - 反向泄漏@ vr: | 5 µA @ 100 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-213AB, MELF |
供应商设备包: | MELF DO-213AB |
工作温度 - 结: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DHG10I600PAWickmann / Littelfuse |
DIODE GEN PURP 600V 10A TO220AC |
|
ES3DBHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AA |
|
GL34MDiotec Semiconductor |
DIODE STD DO-213AA 1000V 0.5A |
|
MUR7020GeneSiC Semiconductor |
DIODE GEN PURP 200V 70A DO5 |
|
EM01V1Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 1A AXIAL |
|
FSU08D60KYOCERA Corporation |
DIODE FAST RECOVERY 600V 8A TO-2 |
|
MURA160T3HRochester Electronics |
REC DPAK 6A 200V ULT H-FR |
|
V15P6HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 15A TO277A |
|
RL1N1200FRectron USA |
DIODE GEN PURP 1200V 1A A405 |
|
1N4248GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
VS-86HFR60Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
|
VS-16FLR20S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A DO203AA |
|
JANTX1N6643USRoving Networks / Microchip Technology |
DIODE GEN PURP 125V 300MA D5D |