CAP CER 0.39UF 200V X7R 2225
CUT-TAPE VERSION. STANDARD RECO
类型 | 描述 |
---|---|
系列: | - |
包裹: | Strip |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 2000 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 1 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 1.5 µs |
电流 - 反向泄漏@ vr: | 5 µA @ 2000 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-213AB, MELF |
供应商设备包: | MELF DO-213AB |
工作温度 - 结: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-30WQ06FNTR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY DPAK |
|
VS-15EVL06HM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
|
SS26L R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A SUB SMA |
|
ACDSW21-GComchip Technology |
DIODE GEN PURP 200V 200MA SOD123 |
|
1N5819-BZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 1A DO41 |
|
VS-SD1500C08LVishay General Semiconductor – Diodes Division |
DIODE GP 800V 1600A DO200AB |
|
UFR3260Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 30A DO4 |
|
MBR2045MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 45V 20A 5DFN |
|
MA3J142A0LPanasonic |
DIODE GEN PURP 80V 100MA SMINI3 |
|
RGP10A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
|
VS-80APF04-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 80A TO247AC |
|
S1D R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
BAS70-02WE6327Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |