类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 500mA |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 500 mA |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 150 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 100 V |
电容@vr, f: | 4pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | Sub SMA |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
G1GF-F1-0000HF |
DIODE GEN PURP 400V 1A SMAF |
|
STPSC5H12DSTMicroelectronics |
DIODE SCHOTTKY 1.2KV 5A TO220AC |
|
ES1DV M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
RFN10TF6SROHM Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
|
V2PM15-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 2A MICROSMP |
|
FR204G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO204AC |
|
UPS360E3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 60V 3A POWERMITE3 |
|
PMEG2015EA,115Nexperia |
DIODE SCHOTTKY 20V 1.5A SOD323 |
|
BAV103-GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 250MA SOD80 |
|
NSVBAS20LT3GSanyo Semiconductor/ON Semiconductor |
DIODE GP 200V 200MA SOT23-3 |
|
RB751S40T1Rochester Electronics |
RECTIFIER DIODE |
|
BAL99-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 70V 250MA SOT23 |
|
JANTXV1N5618USRoving Networks / Microchip Technology |
DIODE GEN PURP 600V 1A D5A |