English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 80 V |
| 电流 - 平均整流 (io): | 240A |
| 电压 - 正向 (vf) (max) @ if: | 860 mV @ 240 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 6 mA @ 80 V |
| 电容@vr, f: | 5500pF @ 5V, 1MHz |
| 安装类型: | Chassis Mount |
| 包/箱: | HALF-PAK |
| 供应商设备包: | PRM1-1 (Half Pak Module) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BYT56J-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
|
HVM10Rectron USA |
DIODE GEN PURP 10000V 350MA HVM |
|
S3JSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 3A SMC |
|
STTH1R02ASTMicroelectronics |
DIODE GEN PURP 200V 1.5A SMA |
|
SL22HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 2A DO214AA |
|
FESB8BTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
|
S1GHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO214AC |
|
MSE1PJHM3J/89AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A MICROSMP |
|
FFM1500WRectron USA |
DIODE GEN PURP 1500V 500MA SMX |
|
SE40PDHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2.4A TO277A |
|
S1GLS RQGTSC (Taiwan Semiconductor) |
DIODE, 1.2A, 400V, SOD-123HE |
|
UF4002-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
CDSU4148-HFComchip Technology |
DIODE GEN PURP 75V 150MA 0603 |
