类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Not For New Designs |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 12A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 12 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 240 µA @ 600 V |
电容@vr, f: | 516pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-220-2 |
供应商设备包: | TO-220AC |
工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N3614Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A AXIAL |
|
BYR29-600,127Rochester Electronics |
NOW WEEN - BYR29-600 - ULTRAFAST |
|
BAT54B5003Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
CGRB202-GComchip Technology |
DIODE GEN PURP 100V 2A DO214AA |
|
BYW72-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
|
BAT42W RHGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 200MA SOD123 |
|
VS-C4PH3006LHN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO247AD |
|
RGP30M-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
|
BAT54WS-G3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323 |
|
SDT40B100STZetex Semiconductors (Diodes Inc.) |
SCHOTTKY RECTIFIER TO220AB TUBE |
|
SBR1A40S3-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 40V 1A SOD323 |
|
ZHCS1000QTAZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 1A SOT23 |
|
SBR02U100LPQ-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 100V 250MA 2DFN |