类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 1200 V |
电流 - 平均整流 (io): | 68A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.8 V @ 20 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 400 µA @ 1200 V |
电容@vr, f: | 1135pF @ 0V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
供应商设备包: | D3Pak |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-21DQ04TBVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A DO204A |
|
SDT04S60IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 4A TO220-2 |
|
SMBSR1010Micro Commercial Components (MCC) |
DIODE SCHOTTKY 100V 1A DO214AA |
|
ES1BL RHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
|
1N4006GHR1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO204AL |
|
SMD23HE-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 2A SOD123HE |
|
SRAS830HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 8A TO263AB |
|
PMEG6010EP/6XNexperia |
DIODE SCHOTTKY 60V 1A CFP5 |
|
SS5P6HM3J/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 5A 60V TO-277A |
|
1A5Rectron USA |
DIODE GEN PURP 1000V 1A R-1 |
|
1N4586GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AC |
|
SS34L MQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 3A SUB SMA |
|
8ETH06-1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO262 |