English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 40 V |
| 电流 - 平均整流 (io): | 2A |
| 电压 - 正向 (vf) (max) @ if: | 600 mV @ 2 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 50 µA @ 40 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | 2-SMD, J-Lead |
| 供应商设备包: | SJP |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R5020213LSWAPowerex, Inc. |
DIODE GEN PURP 200V 125A DO205AA |
|
|
R5031013LSWAPowerex, Inc. |
DIODE GEN PURP 1KV 125A DO205 |
|
|
SFT12GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
|
R7220406HSOOPowerex, Inc. |
DIODE GEN PURP 400V 650A DO200AB |
|
|
IDC75S120C5X7SA1IR (Infineon Technologies) |
SIC CHIP |
|
|
HER606G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 6A R-6 |
|
|
VS-86HFR80MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 85A DO203AB |
|
|
1N1205Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
|
SBRD835LT4Rochester Electronics |
SCHOTTKY BARRIER RECTIFIER |
|
|
SDT3A40SAFS-13Zetex Semiconductors (Diodes Inc.) |
SCHOTTKY RECTIFIER SMAF T&R 10K |
|
|
JTX1N5622Semtech |
D MET 1A STD 1KV HR |
|
|
RS5DC-HFComchip Technology |
RECTIFIER FAST RECOVERY 200V 5A |
|
|
1N6762Roving Networks / Microchip Technology |
RECTIFIER DIODE |
