English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1000 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.05 V @ 1 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 20 µA @ 1000 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | Axial |
| 供应商设备包: | - |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BAV70/ZL215Rochester Electronics |
BAV70 - RECTIFIER DIODE |
|
|
EM01ZWSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |
|
|
SS1H9HE3_B/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 1A SMA |
|
|
EM 1BVSanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1A AXIAL |
|
|
1N5293UR-1Roving Networks / Microchip Technology |
CURRENT REGULATOR DIODE |
|
|
SFT16G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A TS-1 |
|
|
TRS6E65F,S1QToshiba Electronic Devices and Storage Corporation |
DODE SCHOTTKY 650V TO220 |
|
|
S2GAL M3GTSC (Taiwan Semiconductor) |
2A, 400V, STANDARD RECOVERY RECT |
|
|
HSM221C-JTR-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
|
JANTXV1N4942Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
|
S8CKHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A DO214AB |
|
|
NRVHP0620PFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 6A 200V TO277-3 |
|
|
W1263YC160Wickmann / Littelfuse |
RECTIFIER DIODE |
