English
简体中文
DIODE GEN PURP 600V 3A D5B
MEMORY CARD SDXC 32GB UHS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/411 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 9 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 400 ns |
| 电流 - 反向泄漏@ vr: | 1 µA @ 600 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | SQ-MELF, B |
| 供应商设备包: | D-5B |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
ISOPAC0603Semtech |
DIODE GEN PURP 1KV 15A |
|
|
R7220207CSOOPowerex, Inc. |
DIODE GEN PURP 200V 700A DO200AB |
|
|
UF3007-HFComchip Technology |
DIODE GEN PURP 800V 3A DO201AA |
|
|
S1D-HFComchip Technology |
RECTIFIER GEN PURP 200V 1A SMA |
|
|
R7S01212XXPowerex, Inc. |
DIODE GP 1.2KV 1200A DO200AA R62 |
|
|
ES2G-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 40 |
|
|
EGP31C-E3/CVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 3A DO201AD |
|
|
1N6391Roving Networks / Microchip Technology |
SCHOTTKY BARRIER RECTIFIER |
|
|
JTXM19500/483-02Roving Networks / Microchip Technology |
RECTIFIER |
|
|
SJPE-H3VLSanken Electric Co., Ltd. |
DIODE SCHOTTKY SMD |
|
|
HSM276SRTL-ERochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
|
HSU83-2TRF-ERochester Electronics |
DIODE FOR HIGH VOLTAGE SWITCHING |
|
|
1N3892ARRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |