English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 90 V |
| 电流 - 平均整流 (io): | 700mA |
| 电压 - 正向 (vf) (max) @ if: | 810 mV @ 700 mA |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 1 mA @ 90 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | Axial |
| 供应商设备包: | - |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIDC06D60E6X1SA4IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
|
RFN5B3STLROHM Semiconductor |
DIODE GEN PURPOSE CPD |
|
|
RB521S-30HRTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
|
SDM30004RMicrosemi |
DIODE GEN PURP 400V 300A DIE |
|
|
BAS16J/ZLFNexperia |
DIODE GEN PURP 100V 250MA SC90 |
|
|
BYG20J-7001HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V SMA |
|
|
BY253GP-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO201AD |
|
|
RB050LA-40GTRROHM Semiconductor |
DIODE SCHOTTKY 40V 3A PMDT |
|
|
6A20GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 6A R-6 |
|
|
RK 19Sanken Electric Co., Ltd. |
DIODE SCHOTTKY 90V 1.5A AXIAL |
|
|
FR10J-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 10A DO214AB |
|
|
SIDC09D60F6X1SA5IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
|
JAN1N1615Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 15A DO203AA |
