类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Discontinued at Digi-Key |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1200 V |
电流 - 平均整流 (io): | 5A (DC) |
电压 - 正向 (vf) (max) @ if: | 2.1 V @ 5 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 27 µA @ 1200 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Sawn on foil |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRKE56/08AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 60A ADDAPAK |
|
1N5626GP-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AC |
|
RB520S-30LDTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
FS2K-TPMicro Commercial Components (MCC) |
DIODE 2A 800V HSMA DO-214AC |
|
RL101-N-2-3-APMicro Commercial Components (MCC) |
DIODE GEN PURP 50V 1A A-405 |
|
JANTX1N6081Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 2A AXIAL |
|
ND242S10KHPSA1IR (Infineon Technologies) |
DIODE GP 1KV 261A BG-PB50ND-1 |
|
SIDC14D60E6X1SA3IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
SS36-001HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A SMD |
|
SR1503 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 15A R-6 |
|
SIDC30D120F6X1SA2IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 35A WAFER |
|
RL107-N-2-3-APMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 1A A-405 |
|
R9G20209CSOOPowerex, Inc. |
DIODE FAST REC R9G 900A 200V |