类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
二极管型: | PIN - Single |
电压 - 反向峰值(最大值): | 100V |
当前 - 最大值: | 100 mA |
电容@vr, f: | 0.4pF @ 50V, 1MHz |
阻力@如果,f: | 2.5Ohm @ 100mA, 100MHz |
功耗(最大值): | 250 mW |
工作温度: | -65°C ~ 150°C (TJ) |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5767#T25Broadcom |
RF DIODE PIN 100V 250MW |
|
BAR63V-03-G3-08Vishay General Semiconductor – Diodes Division |
DIODE RF PIN DUAL CC SOT323 |
|
QSMS-2920-TR2GBroadcom |
DIODE SCHOTTKY RF |
|
MP61001-30Roving Networks / Microchip Technology |
GAAS PIN HERMETIC PILL |
|
QSMS-2890-TR2GBroadcom |
DIODE SCHOTTKY RF |
|
HSMP-389Z-BLKGBroadcom |
RF DIODE PIN 100V SOD323 |
|
RN262STE61ROHM Semiconductor |
RF DIODE PIN SMD |
|
SM0511-M1/TRRoving Networks / Microchip Technology |
SI PIN HERMETIC MELF |
|
SMP1307-099Skyworks Solutions, Inc. |
DIODE PIN SGL SOT-23 |
|
HSMP-386Z-BLKGBroadcom |
RF DIODE PIN 50V SOD323 |
|
MG1650-M16Roving Networks / Microchip Technology |
GAAS GUNN EPI DOWN HERMETIC STUD |
|
QSMS-2831-TR1GBroadcom |
DIODE SCHOTTKY RF |
|
MG1052-30Roving Networks / Microchip Technology |
GAAS GUNN EPI UP HERMETIC PILL |