类型 | 描述 |
---|---|
系列: | POWERMITE® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 7.5 V |
宽容: | ±5% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 200 Ohms |
电流 - 反向泄漏@ vr: | 10 µA @ 5.7 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-216AA |
供应商设备包: | DO-216 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
DFLZ36Q-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 36V 1W POWERDI123 |
![]() |
SZMMSZ5258ET1GRochester Electronics |
DIODE ZENER 36V 500MW SOD123 |
![]() |
PDZ8.2BGWXRochester Electronics |
DIODE ZENER 8.2V 365MW SOD123 |
![]() |
BZG04-62-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 1.25W DO214AC |
![]() |
SJPZ-N33Sanken Electric Co., Ltd. |
DIODE ZENER 33V 2W SJP |
![]() |
BZX384B30-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 200MW SOD323 |
![]() |
BZT52B6V8-G RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 6.8V 410MW SOD123 |
![]() |
JANTX1N3042D-1Roving Networks / Microchip Technology |
DIODE ZENER 82V 1W DO41 |
![]() |
1PMT5949B/TR7Roving Networks / Microchip Technology |
DIODE ZENER 100V 3W DO216AA |
![]() |
MM5Z2V4T1Rochester Electronics |
DIODE ZENER 2.4V 200MW SOD523 |
![]() |
BZG03C27-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 1.25W DO214AC |
![]() |
SMAJ4757AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 51V 2W DO214AC |
![]() |
CDLL6491Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 1.5W DO213AB |