类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 100 V |
宽容: | ±10% |
功率 - 最大值: | 10 mW |
阻抗(最大)(zzt): | 500 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 76 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-213AB, MELF |
供应商设备包: | DO-213AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CDLL5244Roving Networks / Microchip Technology |
DIODE ZENER 14V 10MW DO213AB |
|
JAN1N6329Roving Networks / Microchip Technology |
DIODE ZENER 16V 500MW DO35 |
|
JANTX1N4133CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 87V 500MW DO213AA |
|
BZT52C4V3-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 410MW SOD123 |
|
GDZ22B-HG3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 200MW SOD323 |
|
ACZRA4762-HFComchip Technology |
DIODE ZENER 82V 1W DO214AC |
|
BZD27C120PHRVGTSC (Taiwan Semiconductor) |
DIODE ZENER 120.5V 1W SUB SMA |
|
BZX84C4V7LFHT116ROHM Semiconductor |
DIODE ZENER 4.7V 250MW SSD3 |
|
JAN1N5529CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO213AA |
|
JANTXV1N4106C-1Roving Networks / Microchip Technology |
DIODE ZENER 12V 500MW DO35 |
|
1N4740AHA0GTSC (Taiwan Semiconductor) |
DIODE ZENER 10V 1W DO204AL |
|
Z2SMB82Diotec Semiconductor |
DIODE ZENER 82V 2W SMB |
|
MMSZ5235B-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW SOD123 |