English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 6.2 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 10 W |
| 阻抗（最大）（zzt）: | 1.1 Ohms |
| 电流 - 反向泄漏@ vr: | 10 µA @ 2 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 2 A |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Chassis Mount |
| 包/箱: | DO-203AA, DO-4, Stud |
| 供应商设备包: | DO-213AA (DO-4) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZX84B30-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 300MW SOT23-3 |
|
CDLL6318Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO213AB |
|
MMBZ5228ELT1Rochester Electronics |
DIODE ZENER 3.9V 225MW SOT23-3 |
|
ZM4730A-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 1W DO213AB |
|
HZM8.2NB1TR-ERochester Electronics |
DIODE ZENER |
|
MMBZ4709-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 350MW SOT23-3 |
|
TLZ30D-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW SOD80 |
|
SMAJ4763E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 91V 2W DO214AC |
|
BZT55B6V2 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 6.2V 500MW MINI MELF |
|
MMBZ5228C-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 225MW SOT23-3 |
|
CDLL5223BRoving Networks / Microchip Technology |
DIODE ZENER 2.7V 10MW DO213AB |
|
BZT52B20-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW SOD123 |
|
BZD27C82PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 82V 1W SUB SMA |
