类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/437 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 13 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 90 Ohms |
电流 - 反向泄漏@ vr: | 10 nA @ 11.7 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 (DO-204AH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMAZ5945B-E3/5AVishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 500MW DO214AC |
|
MMBZ4623-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 350MW SOT23-3 |
|
ZY6.8Diotec Semiconductor |
DIODE ZENER 6.8V 2W DO41 |
|
BZG05B10-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 1.25W DO214AC |
|
FLZ30VCRochester Electronics |
DIODE ZENER 29.1V 500MW SOD80 |
|
SZMMBZ5263BLT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 56V 225MW SOT23-3 |
|
JAN1N3034DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 39V 1W DO213AB |
|
PLZ2V0B-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 2.11V 960MW DO219AC |
|
BZD17C12P RUGTSC (Taiwan Semiconductor) |
DIODE ZENER 12V 800MW SUB SMA |
|
CDLL4105Roving Networks / Microchip Technology |
DIODE ZENER 11V 500MW DO213AB |
|
JANTX1N4614-1Roving Networks / Microchip Technology |
DIODE ZENER 1.8V 500MW DO35 |
|
DFLZ6V2-TPMicro Commercial Components (MCC) |
DIODE ZENER 6.2V 1W SOD123FL |
|
SMAZ5V6-TPMicro Commercial Components (MCC) |
DIODE ZENER 5.6V 1W DO214AC |