类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 47 V |
宽容: | ±5% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 80 Ohms |
电流 - 反向泄漏@ vr: | - |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4987Roving Networks / Microchip Technology |
DIODE ZENER 160V 5W AXIAL |
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CZRV5234B-GComchip Technology |
DIODE ZENER 6.2V 200MW SOD323 |
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JAN1N4465DUSRoving Networks / Microchip Technology |
DIODE ZENER 10V 1.5W D5A |
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1N4753ASanyo Semiconductor/ON Semiconductor |
DIODE ZENER 36V 1W DO41 |
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BZD27C51P RQGTSC (Taiwan Semiconductor) |
DIODE ZENER 51V 1W SUB SMA |
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CMPZ5239B TR PBFREECentral Semiconductor |
DIODE ZENER 9.1V 350MW SOT23 |
|
JAN1N4960DRoving Networks / Microchip Technology |
DIODE ZENER 12V 5W E AXIAL |
|
JAN1N4112C-1Roving Networks / Microchip Technology |
DIODE ZENER 18V DO35 |
|
TZM5260B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 500MW SOD80 |
|
SMBJ5918C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 2W SMBJ |
|
1N5940AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 43V 1.5W DO204AL |
|
MMBZ5263B-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 225MW SOT23-3 |
|
BZV55B4V3 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 4.3V 500MW MINI MELF |