类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 51 V |
宽容: | ±5.88% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 60 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 39 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | Sub SMA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
CMPZ5239B TR PBFREECentral Semiconductor |
DIODE ZENER 9.1V 350MW SOT23 |
![]() |
JAN1N4960DRoving Networks / Microchip Technology |
DIODE ZENER 12V 5W E AXIAL |
![]() |
JAN1N4112C-1Roving Networks / Microchip Technology |
DIODE ZENER 18V DO35 |
![]() |
TZM5260B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 500MW SOD80 |
![]() |
SMBJ5918C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 2W SMBJ |
![]() |
1N5940AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 43V 1.5W DO204AL |
![]() |
MMBZ5263B-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 225MW SOT23-3 |
![]() |
BZV55B4V3 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 4.3V 500MW MINI MELF |
![]() |
ZY20Diotec Semiconductor |
DIODE ZENER 20V 2W DO41 |
![]() |
BZG04-30-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 1.25W DO214AC |
![]() |
HZ11A1TA-ERochester Electronics |
DIODE ZENER 11V 500MW DO35 |
![]() |
SMBJ5921A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 2W SMBJ |
![]() |
PTZTE2512AROHM Semiconductor |
DIODE ZENER 12V 1W PMDS |