English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 110 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 450 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 83.6 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTXV1N3033CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 36V 1W DO213AB |
|
JAN1N4488CRoving Networks / Microchip Technology |
DIODE ZENER 91V 1.5W D5A |
|
GDZ10B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 200MW SOD323 |
|
MMBZ4683-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3V 350MW SOT23-3 |
|
BZD27C56PHRQGTSC (Taiwan Semiconductor) |
DIODE ZENER 56V 1W SUB SMA |
|
MMSZ6V2ET1GRochester Electronics |
DIODE ZENER |
|
MM5Z8V2Rochester Electronics |
DIODE ZENER 8.2V 0.2W 6.1% UNI |
|
BZT52C22-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 410MW SOD123 |
|
1N945BRoving Networks / Microchip Technology |
DIODE ZENER 11.7V 500MW DO35 |
|
MM3Z68VCRochester Electronics |
DIODE ZENER 68V 200MW SOD323F |
|
TZMC2V7-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.7V 500MW SOD80 |
|
BZX84-C2V4,235Nexperia |
DIODE ZENER 2.4V 250MW TO236AB |
|
JAN1N4966CRoving Networks / Microchip Technology |
DIODE ZENER 22V 5W E AXIAL |
