类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 30 V |
宽容: | ±10% |
功率 - 最大值: | 1.5 W |
阻抗(最大)(zzt): | 28 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 22.8 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 150°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZT52C8V2-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 410MW SOD123 |
|
MMSZ5265C-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 500MW SOD123 |
|
HZK27TRRochester Electronics |
DIODE ZENER 27V 500MW LLD |
|
BZV55C3V6 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 3.6V 500MW MINI MELF |
|
MZP4741ARLRochester Electronics |
DIODE ZENER |
|
PZU30BL,315Nexperia |
DIODE ZENER 30V 250MW DFN1006-2 |
|
BZT52B30-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 410MW SOD123 |
|
SZBZX84C8V2ET1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 8.2V 225MW SOT23-3 |
|
BZV55C9V1Roving Networks / Microchip Technology |
DIODE ZENER 9.1V DO213AA |
|
1N3313RBRoving Networks / Microchip Technology |
DIODE ZENER 14V 50W DO5 |
|
BZT52B36-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 410MW SOD123 |
|
PDZVTFTR30BROHM Semiconductor |
DIODE ZENER 30V 1W PMDTM |
|
BZX84-C75,235Nexperia |
DIODE ZENER 75V 250MW TO236AB |