类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 15 V |
宽容: | ±5% |
功率 - 最大值: | 200 mW |
阻抗(最大)(zzt): | 20 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 11 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -55°C ~ 125°C |
安装类型: | Surface Mount |
包/箱: | 1005 (2512 Metric) |
供应商设备包: | 1005/SOD-323F |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4627UR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
BZX79-C33,133Nexperia |
DIODE ZENER 33V 400MW ALF2 |
|
UDZLVFHTE-17100ROHM Semiconductor |
DIODE ZENER 100V 200MW UMD2 |
|
MMBZ5254C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 225MW SOT23-3 |
|
UFZVFHTE-176.2BROHM Semiconductor |
DIODE ZENER 6.2V 500MW UMD2 |
|
1N749ATRRochester Electronics |
DIODE ZENER 4.3V 500MW DO35 |
|
BZD27C62PHRQGTSC (Taiwan Semiconductor) |
DIODE ZENER 62V 1W SUB SMA |
|
BZD27C6V8P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 800MW DO219AB |
|
CZRF52C24Comchip Technology |
DIODE ZENER 24V 200MW 1005 |
|
BZX85B100-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 100V 1.3W DO41 |
|
MMBZ5253B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 25V 225MW SOT23-3 |
|
1N4755A R1GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 1W DO204AL |
|
PZU5.6BA,115Nexperia |
DIODE ZENER 5.6V 320MW SOD323 |