English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Cut Tape (CT)Tape & Box (TB) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 9.1 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 20 Ohms |
| 电流 - 反向泄漏@ vr: | 500 nA @ 6 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2M190ZHR0GTSC (Taiwan Semiconductor) |
DIODE ZENER 190V 2W DO204AC |
|
MMSZ5253B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 25V 500MW SOD123 |
|
TZQ5229B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW SOD80 |
|
1PMT5950BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 110V 3W DO216AA |
|
1PMT5925/TR13Roving Networks / Microchip Technology |
DIODE ZENER 10V 3W DO216AA |
|
1N5267C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 500MW DO35 |
|
JAN1N6347Roving Networks / Microchip Technology |
DIODE ZENER 91V 500MW DO35 |
|
1N3306RBRoving Networks / Microchip Technology |
DIODE ZENER 7.5V 50W DO5 |
|
PZU6.2B,115Nexperia |
DIODE ZENER 6.2V 310MW SOD323F |
|
MMBZ4689-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 350MW SOT23-3 |
|
1N5225BSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3V 500MW DO35 |
|
CMHZ5251B TR PBFREECentral Semiconductor |
DIODE ZENER 22V 500MW SOD123 |
|
BZX384B33-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 200MW SOD323 |
