English
简体中文
RES CHAS MNT 12 OHM 1% 10W
DIODE ZENER 6.2V 410MW SOD123
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 6.2 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 410 mW |
| 阻抗（最大）（zzt）: | 4.8 Ohms |
| 电流 - 反向泄漏@ vr: | 100 nA @ 2 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-123 |
| 供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UDZVTE-1727BROHM Semiconductor |
DIODE ZENER 27V 200MW UMD2 |
|
BZD27C110P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 800MW DO219AB |
|
CDLL5258BRoving Networks / Microchip Technology |
DIODE ZENER 36V 10MW DO213AB |
|
ZPY68-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 1.3W DO41 |
|
1N5235C-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW DO35 |
|
BZT52C20 RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 20V 500MW SOD123F |
|
BZD27B39P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 800MW DO219AB |
|
GDZ5V6B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 200MW SOD323 |
|
BZX84C15-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 300MW SOT23-3 |
|
CZRFR52C15-HFComchip Technology |
DIODE ZENER 15V 200MW 1005 |
|
BZV55-C12,135Nexperia |
DIODE ZENER 12V 500MW LLDS |
|
ZPY62-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 1.3W DO41 |
|
NZX5V6C,133Nexperia |
DIODE ZENER 5.6V 500MW ALF2 |