类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, BZD27C |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 33 V |
宽容: | - |
功率 - 最大值: | 800 mW |
阻抗(最大)(zzt): | 15 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 24 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | DO-219AB (SMF) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4107D-1Roving Networks / Microchip Technology |
DIODE ZENER 13V DO35 |
|
1PMT5929A/TR7Roving Networks / Microchip Technology |
DIODE ZENER 15V 3W DO216AA |
|
DZ2J06800LPanasonic |
DIODE ZENER 6.8V 200MW SMINI2 |
|
BZX84C11-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 300MW SOT23-3 |
|
MAZ33600MLPanasonic |
DIODE ZENER 36V 200MW MINI3 |
|
MM5Z3V3T1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3.3V 500MW SOD523 |
|
NZX5V6D,133Nexperia |
DIODE ZENER 5.6V 500MW ALF2 |
|
HZS6A2LTD-ERochester Electronics |
DIODE ZENER |
|
BZD17C27P R3GTSC (Taiwan Semiconductor) |
DIODE ZENER 27V 800MW SUB SMA |
|
BZV55C47Roving Networks / Microchip Technology |
DIODE ZENER 47V DO213AA |
|
HZS4.3NB2TA-ERochester Electronics |
DIODE ZENER 0.4W |
|
MMBZ5260C-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 225MW SOT23-3 |
|
SMBJ5345A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 8.7V 5W SMBJ |