类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
电压 - 齐纳 (nom) (vz): | 15 V |
宽容: | ±5% |
功率 - 最大值: | 150 mW |
阻抗(最大)(zzt): | 30 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 11 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -55°C ~ 125°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 0603 (1608 Metric) |
供应商设备包: | 0603 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZT55C22-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 500MW SOD80 |
|
MMBZ5250BLT3GRochester Electronics |
DIODE ZENER 20V 225MW SOT23-3 |
|
MMBZ5251B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 225MW SOT23-3 |
|
MM3Z36VCSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 36V 200MW SOD323F |
|
JANTX1N4476DRoving Networks / Microchip Technology |
DIODE ZENER 30V 1.5W DO41 |
|
BZM55C56-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW MICROMELF |
|
1PMT5928/TR13Roving Networks / Microchip Technology |
DIODE ZENER 13V 3W DO216AA |
|
HZS2.2NB1TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
SMBZ5927B-M3/52Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 550MW DO214AA |
|
HZS2B1TA-ERochester Electronics |
DIODE ZENER 0.4W |
|
1N5349BGSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 12V 5W AXIAL |
|
1N4741AP-TPMicro Commercial Components (MCC) |
DIODE ZENER 11V 1W DO-41 |
|
JANTXV1N5531C-1Roving Networks / Microchip Technology |
DIODE ZENER 11V 500MW DO35 |