类型 | 描述 |
---|---|
系列: | BZG03B-M |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 180 V |
宽容: | ±2% |
功率 - 最大值: | 1.25 W |
阻抗(最大)(zzt): | 400 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 130 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 500 mA |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TDZ5V6JFNexperia |
DIODE ZENER 5.6V SOD323F |
|
1N3349ARoving Networks / Microchip Technology |
DIODE ZENER 180V 50W DO5 |
|
1N4741AHB0GTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 1W DO204AL |
|
BZX884S-B4V3YLNexperia |
DIODE ZENER 4.3V 365MW 2DFN |
|
1N4753G R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 36V 1W DO204AL |
|
MM5Z9V1Rochester Electronics |
DIODE ZENER 9.1V 0.2W 6.08% UNI |
|
BZG03C82TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 1.25W DO214AC |
|
1N5539BRoving Networks / Microchip Technology |
DIODE ZENER 19V 500MW DO35 |
|
MMBZ4716-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 350MW SOT23-3 |
|
SMBJ5348CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 11V 5W SMBJ |
|
MMSZ4707-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW SOD123 |
|
BZD27C33P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 800MW DO219AB |
|
UDZVTE-175.6BROHM Semiconductor |
DIODE ZENER 5.6V 200MW UMD2 |