类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 43 V |
宽容: | ±5% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 70 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 32.7 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZT52-C6V2JNexperia |
DIODE ZENER 6.2V 350MW SOD123 |
|
1N4901ARoving Networks / Microchip Technology |
DIODE ZENER 12.8V 400MW DO7 |
|
1N821AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
1N4733A TR PBFREECentral Semiconductor |
DIODE ZENER 5.1V 1W DO41 |
|
CZRFR52C4V7-HFComchip Technology |
DIODE ZENER 4.7V 200MW 1005 |
|
MM3Z30-AQDiotec Semiconductor |
DIODE ZENER 30V 300MW SOD323 |
|
BZD27C100P RVGTSC (Taiwan Semiconductor) |
DIODE ZENER 100V 1W SUB SMA |
|
1SMB5928BT3Rochester Electronics |
DIODE ZENER 13V 3W SMB |
|
CMPZ5256B TR PBFREECentral Semiconductor |
DIODE ZENER 30V 350MW SOT23 |
|
PLZ30D-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW DO219AC |
|
JANTXV1N4371A-1Roving Networks / Microchip Technology |
DIODE ZENER 2.7V 500MW DO35 |
|
BZD27B82P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 800MW DO219AB |
|
JANTX1N3035D-1Roving Networks / Microchip Technology |
DIODE ZENER 43V 1W DO41 |